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v rm = 200 v, i f = 5 a, 10 a, 15 a fast recovery diode built-in temperature detection fmks series data sheet fmks-dse re v. 1.0 sanken electric co.,ltd. 1 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 description the fmks series is the fast recovery diode built-in temperature detection. a fast recovery diode and a schottky barrier diode for temperature detection are formed on the same die. thus, the fmks series achieves highly accurate temperature detection that is higher than that with a thermistor, component reduction, power supply downsizing, and easy attachment. features built-in temperature detection high ly accurate temperature detection of frd component reduction of temperature detection high speed switching low forward voltage drop typical application converter ic t1 out fmks series (+) fb pc1 pc1 d s (-) r s u1 u2 ref anode of sbd 1 2 3 package to220f- 3l not to scale (1) anode of schottky barrier diode , sbd, for temerature detection (2) cathode (3) anode of fast recovery diode, frd fmks series products v rm i f v f t rr fmks- 2052 200 v 5 a 0.98 v 50 ns fmks- 2102 10 a fmks- 2152 15 a where, v rm is peak reverse voltage, i f is average forward current, v f is forward voltage drop, and t rr is reverse recovery time application the following with thermal protection circuit and peak power limiting circuit, and so forth audio white goods power supplies (1)(2)(3) (1) (2) (3) sbd frd downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 2 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 contents description ------------------------------------------------------------------------------------------------------ 1 contents ---------------------------------------------------------------------------------------------------- 2 1. absolute maximum ratings ----------------------------------------------------------------------------- 3 2. electrical characteristics -------------------------------------------------------------------------------- 4 3. performance curves -------------------------------------------------------------------------------------- 5 3.1 schottky barrier diode for temperature detection diode characteristics ------------- 5 3.2 fast recovery diode characteristics ------------------------------------------------------------ 6 3.2.1 fmks-2052 ------------------------------------------------------------------------------------- 6 3.2.2 fmks-2102 ------------------------------------------------------------------------------------- 8 3.2.3 FMKS-2152 ------------------------------------------------------------------------------------- 9 4. external dimensions ------------------------------------------------------------------------------------ 11 5. marking diagram --------------------------------------------------------------------------------------- 11 6. temperature detection application of fmks series -------------------------------------------- 12 important notes ------------------------------------------------------------------------------------- 14 downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 3 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 1. absolute maximum ratings unless specifically noted t a = 25 c. parameter symbol conditions rating unit note fast recovery diode (fr d) transient peak reverse voltage v rsm 200 v peak repetitive reverse voltage v rm 200 v average forward current i f(av) 5 a fmks- 2052 10 fmks- 2102 15 fmks- 2152 surge forward current i fsm 10 ms, half sine wave, one shot 100 a fmks- 2052 140 fmks- 2102 170 fmks- 2152 i 2 t limiting value i 2 t 1 ms t 10 ms 50 a 2 s fmks- 2052 98 fmks- 2102 144.5 fmks- 2152 junction temperature t j ? 40 to 150 c storage temperature t stg ? 40 to 150 c isolation voltage ? between the case and each pin, 1 minute, ac 1 .0 kv schottky barrier diode for temperature detection (sbd) transient peak reverse voltage v rsm 90 v peak repetitive reverse voltage v rm 90 v junction temperature t j ? 40 to 150 c storage temperature t stg ? 40 to 150 c downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 4 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 2. electrical characteristics unless specifically noted t a = 25 c. parameter symbol conditions min. typ. max. unit note fast recovery diode (frd) forward voltage drop v f i f = 5 a ? ? 0.98 v fmks- 2052 i f = 10 a ? ? 0.98 fmks- 2102 i f = 15 a ? ? 0.98 fmks- 2152 reverse leakage current i r v r = v rm ? ? 50 a fmks- 2052 ? ? 100 fmks- 2102 ? ? 150 fmks- 2152 reverse leakage current under high temperature h ? i r v r = v rm t j = 150 c ? ? 3 ma fmks- 2052 ? ? 6 fmks- 2102 ? ? 10 fmks- 2152 reverse recovery time t rr1 i f = i rp = 100 ma, t j = 25 c, 90 % recovery point ? ? 50 ns t rr2 i f = 100 ma , i rp = 200 ma, t j = 25 c, 75 % recovery point ? ? 35 ns thermal resistance* r th(j - c) ? ? 4.0 c/w schottky barrier diode for temperature detection diode (sbd) reverse leakage current i r1 v r = 15v ? ? 50 a i r2 v r = 90v ? ? 2.0 ma reverse leakage current under high temperature h ? i r1 v r = 15v, t j = 130 c 1 .2 0 1 .9 0 2.60 ma h ? i r2 v r = 90v, t j = 150 c ? ? 55 ma * r th(j -c) is thermal resistance between junction and case. downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 5 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 3. performance curves 3.1 schottky barrier diode for temperature detection diode characteristics in figure 3-1 , the reverse voltage of schottky barrier diode for tem pe rature detection (sbd) , v r , is 15v. the temperature of fast recovery dio de (frd) can be estimated by using figure 3-1. figure 3-1 temperature dependent of reverse leakage current, i r (sbd) 0.0 1.0 2.0 3.0 4.0 5.0 70 80 90 100 110 120 130 140 reverse leakage current, i r (ma) junction temperature, t j ( c) max. typ. min. downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 6 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 3.2 fast recovery diode characteristics t is a pu lse cycle, t is a pulse width. 3.2.1 fmks-2052 3.2.1.1. typical characteristics figure 3-2 i f v f typical characteristics figure 3-3 i r v r typical characteristics 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 forward current, i f (a) forward voltage, v f (v) 1.e- 09 1.e- 08 1.e- 07 1.e- 06 1.e- 05 1.e- 04 1.e- 03 1.e- 02 0 50 100 150 200 reverse current, i r (a) reverse voltage, v r (v) t a = 100 c t a = 1 50 c t a = 25 c t a = 60 c t a = 1 00 c t a = 150 c t a = 25 c t a = 60 c downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 7 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 3.2.1.2. power dissipation curves (t j = 150 c) figure 3-4 p f i f(av) figure 3-5 p r v r 3.2.1.3. derating curves (t j = 150 c) figure 3-6 i f(av) t l (v r = 0 v) figure 3-7 i f(av) t l (v r = 200 v) 0 1 2 3 4 5 6 7 0 1 2 3 4 5 forward power dissipation, p f (w) average forward current, i f(av) (a) 0 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 200 reverse power dissipation, p r (w) reverse voltage, v r (v) 0.0 1.0 2.0 3.0 4.0 5.0 120 125 130 135 140 145 150 average forward current, i f(av) (a) lead temperature, t l ( c) 0.0 1.0 2.0 3.0 4.0 5.0 120 125 130 135 140 145 150 average forward current, i f(av) (a) lead temperature, t l ( c) dc sine wave dc sine wave dc downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 8 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 3.2.2 fmks-2102 3.2.2.1. typical characteristics figure 3-8 v f i f typical characteristi cs figure 3-9 v r i r typical characteristics 3.2.2.2. power dissipation curves (t j = 150 c) figure 3- 10 p f i f(av) figure 3- 11 p r v r 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 forward current, i f (a) forward voltage, v f (v) 1.e- 08 1.e- 07 1.e- 06 1.e- 05 1.e- 04 1.e- 03 1.e- 02 0 50 100 150 200 reverse current, i r (a) reverse voltage, v r (v) 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 forward power dissipation, p f (w) average forward current, i f(av) (a) 0 0.2 0.4 0.6 0.8 1 1.2 0 50 100 150 200 reverse power dissipation, p r (w) reverse voltage, v r (v) t a = 100 c t a = 1 50 c t a = 25 c t a = 60 c t a = 1 00 c t a = 150 c t a = 25 c t a = 60 c sine wave dc downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 9 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 3.2.2.3. derating curves (t j = 150 c) figure 3- 12 i f(av) t l (v r = 0 v) figure 3- 13 i f(av) t l (v r = 200 v) 3.2.3 FMKS-2152 3.2.3.1. typical characteristics figure 3- 14 v f i f typical characteristics figure 3- 15 v r i r typical characteristics 0.0 2.0 4.0 6.0 8.0 10.0 80 90 100 110 120 130 140 150 average forward current, i f(av) (a) lead temperature, t l ( c) 0.0 2.0 4.0 6.0 8.0 10.0 80 90 100 110 120 130 140 150 average forward current, i f(av) (a) lead temperature, t l ( c) 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 forward current, i f (a) forward voltage, v f (v) 1.e- 08 1.e- 07 1.e- 06 1.e- 05 1.e- 04 1.e- 03 1.e- 02 0 50 100 150 200 reverse current, i r (a) reverse voltage, v r (v) t a = 100 c t a = 1 50 c t a = 25 c t a = 60 c t a = 1 00 c t a = 150 c t a = 25 c t a = 60 c dc dc sine wave downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 10 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 3.2.3.2. power dissipation curves (t j = 150 c) figure 3- 16 p f i f(av) figure 3- 17 p r v r 3.2.3.3. derating curves (t j = 150 c) figure 3- 18 i f(av) t l (v r = 0 v) figure 3- 19 i f(av) t l (v r = 200 v) 0 5 10 15 20 25 0 5 10 15 forward power dissipation, p f (w) average forward current, i f(av) (a) 0 0.5 1 1.5 2 0 50 100 150 200 reverse power dissipation, p r (w) reverse voltage, v r (v) 0.0 2.5 5.0 7.5 10.0 12.5 15.0 60 70 80 90 100 110 120 130 140 150 average forward current, i f(av) (a) lead temperature, t l ( c) 0.0 2.5 5.0 7.5 10.0 12.5 15.0 60 70 80 90 100 110 120 130 140 150 average forward current, i f(av) (a) lead temperature, t l ( c) sine wave dc dc sine wave dc downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 11 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 4. external dimensions to220f- 3l notes: dimension is in millimeters. lead treatment pb-free. device composition compliant with the rohs directive. 5. marking diagram 1 y m d d 3 2 specific device code lot number y is the last digit of year (0 to 9) m is the month (1 to 9, o, n or d) dd is a period of days (01 to 31) table 5-1 specific device code specific device code products ks2052 fmks- 2052 ks2102 fmks- 2102 ks2152 fmks- 2152 (see table 5-1) downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 12 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 6. temperature detection application of fmks series this section shows an example about a temperature detection circuit of a secondary rectifier diode in off-line flyback converters. figure 6-1 shows the reference of temperature detection circuit with a ntc thermistor. the ntc thermistor , coupled thermally with d s secondary rectifier diode, is connected to the ref pin of the output voltage detection circuit in the converter. as shown in figure 6-2, as the temperature rises, the resistance of the ntc thermistor decreases. when the temperature of d s rises due to such a cause as overload state , the resistance of ntc thermistor decreases, and the ratio of resistance voltage divider is changed . when the voltage of r s shown in figure 6-1 reach es the reference voltage of u1 shunt regulator, the current flows to pc1 optocoupler, and the converter ic in the primary limits the output power. thus, the rise of d s temperature can be limited. converter ic t1 out (+) (-) fb pc1 pc1 d s u1 u2 ntc r s ref figure 6-1 reference temperature de tection circuit with ntc thermistor temperature (c) resistance ( ) 0 150 figure 6-2 reference characteristics of ntc thermistor the temperature detection circuit with thermistor has the following issues. since some attachment distance occurs between the thermistor and d s , the accurate temperature of d s cannot be detected. thermistor cannot follow the rapid temperature change. increasing the accuracy of temperature detection by reducing the thermal resistance between d s and the thermistor , it is necessary to attach the thermistor to d s with high thermal conuctivity material between them. in contrast with the temperature detection of thermistor, the fmks series can achieve high accuracy of temperature detection by the following. the internal structure is formed a schottky barrier diode for temperature detection, sbd, and a fast recovery diode , frd, on the same die as shown in figure 6-3. thus, the temperature is about the same between sbd and frd. the temperature detection uses the temperature characteristics of the leakage current for sbd, which increases as the temperature rises as shown in figure 6-4. the temperature detection circuit with fmks series has the following advantages. highly accurate and stable temperature detection of frd. real time temperature detection of frd. circuit component reduction such as thermistor, and easy attachment. power supply downsizing. (1) (2) (3) frd sbd figure 6-3 internal structure of fmks series temperature (c) leakage current, i r (a) 0 150 figure 6-4 reference temperature characteristics of sbd leakage current downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 13 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 figure 6-5 shows the reference of temperature detection circu it with fmks series. the anode pin of sbd for the temperature detection in d s secondary rectifier diode is connected to the ref pin of the shunt regulator of the output voltage detection circuit in the converter. when the temperature of d s rises due to such a cause as overload state , the leakage current, i r , of sbd for temperature detection increases, and the voltage of r s shown in figure 6-5 increases. when r s voltage reaches the reference voltage of u1 shunt regulator, the curren t flows to pc1 optocoupler, and the converter ic in the primary limits the output power. thus, the rise of d s temperature can be limited. converter ic t1 out fmks series (+) fb pc1 pc1 d s (-) r s u1 u2 ref anode of sbd 1 2 3 figure 6-5 reference temperature detection circuit with fmks series. in figure 6-5 , r s value is calculated as follows. where, v ref is the reference voltage of u1 shunt regulator, i r(td)max is the maximum leakage current of sbd at the temperature detection value of t d in figure 6-6 or section 3.1. when t d is 115 c, i r(td)max is 1 ma as shown figure 6-6. thus, when v ref is 2.5 v, r s value is 2.5 k , and thus the fmks series can detect in the range of 11 5 c to 127 c. when r s value is chosen 2. 7 k from e24 series close to the above value, i r(td)max is 0.93 ma, and thus the temperature detection range is 11 4 c to 126 c. when the junction temperature of sbd rises close to 150 c, the leakage current of sbd increases rapidly and th e power dissipation increases. thus, r s should be set so that the temperature is detected in 140 c or less including variation. figure 6-6 temperature detection range at i r = 1.0ma figure 6-7 shows the reference circuit for multi- outputs with fmks series in off-line flyback converter. in the case that fmks series and the synchronous rectification device, q syn , for the other output are attached on the same heatsink so that the temperature from q syn is conducted to fmks series, the fmks series can detect the temperature in the following. the overload state of q syn . the rectification state by the rectifier diode in q syn because the synchronous rectification ic malfunctions and thus q syn is kept off. converter ic t1 out2 fmks (+) (-) fb pc1 pc1 d s q syn out1 (+) synchronous rectification ic mount on same heatsink. u1 u2 r s ref anode of sbd 1 2 3 figure 6-7 reference circuit with fmks series in the multi-output flyback converter circuit 0 1 2 3 4 5 70 80 90 100 110 120 130 140 reverse leakage current, i r (ma) junction temperature, t j ( c) max. typ. min. 115 127 downloaded from: http:///
fmks series fmks-dse re v. 1.0 sanken electric co.,ltd. 14 feb.08 , 2 01 6 http://www.sanken-ele.co.jp/en ? sanken electric co ., ltd. 2016 important notes all data, illustrations, graphs, tables and any other information included in this document as to san ken s products listed herein (the sanken products) are current as of the date this document is issu ed . all contents in this document are subject to any change without notice due to improvement, etc. please make sure that the co ntents set forth in this document reflect the latest revisions before use. the sanken products are intended for use as components of gene ral purpose electronic equipment or apparatus (such as home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). prior to use of the sanken products, please put your signature, or affix your name and seal, on the specification documents of the sanken products and return the m to sanken. if considering use of the sanken products for any a pplications that require high er reliability (transportation equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety devices, etc.), you must contact a sanken sales representative to discuss the suitability of su ch use and put your signature, or affix your name and seal, on the specification documents of the sanken products and retur n them to sanken, prior to the use of the sanken products. any use of the sanken products without the prior written consent of san ken in any applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. in the event of using the sanken products by either (i) combining other prod ucts or materials therewith or (ii) physically, chemically or otherwise processing or treating the same , you must du ly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. although sanken is making efforts to enhance the quality a nd reliability of its products, it is impossible to completely avoid th e occurrence of any failure or defect in semiconductor products at a certain rate. you must take, at your own responsibility , preventative measures including using a sufficient safety design and con firming safety of any equipment or systems in/for which th e sanken products are used, upon due consideration of a fail ure occurrence rate or derating, etc., in order not to cause any huma n injury or death, fire accident or social harm which may result from any f ailure or malfunction of the sanken products. please refer to the relevant specification documents and sanken s official website in relation to derating. no anti-radioactive ray design ha s been adopted for the sanken products. no contents in this document can be transcribed or copied without sankens prior written consent. the circuit constant, operation examples, circuit examples, pattern la yout examples, design examples, recommended examples and evaluation results based thereon, etc., described in this document are presented for the sole purpose of referen ce of use of the sanken products and sanken assumes no responsibility whatsoeve r for any and all damages and losses that may be suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you, users or any third party, resulting from the foregoin g. all technical information described in this document (the technical info rmation) is presented for the sole purpose of reference of use of the sanken products and no license, express, implied or otherwise, is granted hereby under any intellectual property rights or any other rights of sanken. unless otherwise agreed in writing between sanken and you, sank en makes no warranty of any kind, whether express or implied, as to the 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